Shinko Seiki Plasma CVD System

Manufacturer: Shinko Seiki Co., Ltd.

Specifications

TargetFor production
Allowable processing range600 × 600 (mm)
Processing timeApprox. 4.5 hours / batch (SiO2 15 µm forming process)
Film thickness distribution560 × 560 (mm) plane: ± 7% or less
Film thickness15 µm (SiO2)
Applied gasAr, N2O, SiH4 (Ar dilution), Nitrogen (For venting / purging)
Main exhaust vacuum pumpOil diffusion pump (Optional: Turbo-molecular pump)
RF power supply for discharge13.56 MHz (1.5kW)
Substrate heaterHeating temperature: 360°C ± 10°C (380°C max.)
OperationFully automatic operation from touch panel

 

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